We are pleased to announce that part number 6011016-002 with NSN 5962010962197 under 5962 Microcircuits Electronic, is now ready to ship. Manufactured by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems under CAGE Code 12436 this part is a; Microcircuit Memory. Are you interested in a quick quote for 6011016-002 part number? Simply fill out the form below to begin. Your quote will take into account your answers to the fields “Needs Parts By” and “Quantity” in particular. An account manager will respond to your RFQ by email or by phone within 15 minutes of receiving this form.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-096-2197 Item Description: Microcircuit Memory | 5962 | 010962197 | N | B | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| A | 0 | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 6011016-002 | 3 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 790 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 265 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 165 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING413 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND HIGH SPEED AND WDECODED OUTPUT AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 5 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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